Rapid annealing of silicon with a scanning CW Hg lamp

Details Rapid annealing of silicon with a scanning CW Hg lamp Rapid annealing of silicon with a scanning CW Hg lamp

Oct 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982jap....53.7109s&link_type=abstract

Journal of Applied Physics, vol. 53, Oct. 1982, p. 7109-7111. Research supported by the Lockheed Missile and Space Co.;

Physics

5

Annealing, Arc Lamps, Mercury Arcs, Mercury Lamps, Silicon, Systems Engineering, Continuous Radiation, Ion Implantation, Reflectors, Scanning, Semiconductors (Materials)

Scientific paper

A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV As-75(+) to 1 x 10 to the 15th per sq cm have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.

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