X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and SI wafer

Details X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and SI wafer X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and SI wafer

Jul 1997

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1997spie.3113..469p&link_type=abstract

Proc. SPIE Vol. 3113, p. 469-475, Grazing Incidence and Multilayer X-Ray Optical Systems, Richard B. Hoover; Arthur B. Walker; E

Computer Science

Scientific paper

Reflectivity at (lambda) equals 0.154 nm and mechanical stress in the bulk thin films of tungsten and silicon and single d- spacing multilayers on their basis with d approximately equals 2.8 nm deposited by the magnetron sputtering technique on flat thin substrates of Si wafer (approximately 0.2 mm), glass (approximately 0.3 mm), and epoxy gold replicated aluminum foil (approximately 0.3 mm) have been studied. The interfacial roughness of the multilayers has been calculated from the x- ray reflectivity curves as the following: on Si wafer (sigma) approximately equals 0.31 nm, on glass (sigma) approximately equals 0.32 nm, and on foil (sigma) approximately equals 0.34 nm. There was not observed a significant dependence on the stress in the Si film with change in rf power, Ar gas pressure and biasing. For the W films an increase of dc power results in an increase of stress. A similar relationship is also evident for W films deposited by rf power, but this dependence is less pronounced. The influence of low temperature (up to 200 degrees Celsius) annealing on x-ray reflectivity and stress in the multilayers has been investigated. There was not found an appreciable changes in the absolute value of reflectivity or in d-spacing with annealing temperature. The stress in the coatings changes with annealing temperature from compressive to tensile. There was observed a temperature of annealing at which the stress is no longer present in the film. The absolute value of this temperature measured for W/Si multilayer is approximately 120 degrees Celsius.

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