X-ray measurements of charge diffusion effects in EEV Ltd. charge-coupled devices

Details X-ray measurements of charge diffusion effects in EEV Ltd. charge-coupled devices X-ray measurements of charge diffusion effects in EEV Ltd. charge-coupled devices

Aug 1987

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1987opten..26..773l&link_type=abstract

Optical Engineering (ISSN 0091-3286), vol. 26, Aug. 1987, p. 773-778.

Computer Science

Numerical Analysis

9

Charge Coupled Devices, Charge Transfer, Low Noise, X Ray Astronomy, X Ray Imagery, X Ray Spectroscopy, Cross Sections, Drift Rate, Electron Diffusion, Monte Carlo Method, Numerical Analysis, Pixels

Scientific paper

The application of CCDs to X-ray imaging spectrometers requires that all charge liberated by an X-ray proton be completely collected within the original pixel; charge diffusion processes may prevent this and degrade the obtainable energy resolution. Attention is presently given to X-ray charge diffusion effects measurements for three proprietary types of CCDs fabricated on bulk and epitaxial wafers with resistivities of 1000 and 10 ohms cm, and for a range of different pixel sizes. An account is given of the implications of these results for X-ray astronomical spectroscopy CCD structures.

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