X-Ray Effects on the Noise Performances of 0.18 and 0.25 μm CMOS Processes for Front-End Applications

Details X-Ray Effects on the Noise Performances of 0.18 and 0.25 μm CMOS Processes for Front-End Applications X-Ray Effects on the Noise Performances of 0.18 and 0.25 μm CMOS Processes for Front-End Applications

Jul 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004apsp.conf..646m&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 8th Conference. Held 6

Physics

Medical Physics

Scientific paper

This paper presents a comparative study of ionizing radiation effects in 0.18 and 0.25 μm CMOS transistors, in order to evaluate the impact of device scaling in the design of low-noise rad-hard analog circuits for detector front-end applications. A comparison of static, signal and noise performances of 0.18 and 0.25 μm CMOS transistors with the same gate dimensions irradiated in the same conditions is reported, showing the benefits of device scaling.

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