Variable-Range Hopping Conductivity in InGaN

Details Variable-Range Hopping Conductivity in InGaN Variable-Range Hopping Conductivity in InGaN

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..293y&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 293-294 (2007).

Physics

Mobility Edges, Hopping Transport, Nucleation And Growth: Microscopic Aspects, Iii-V Semiconductors, Chemical Vapor Deposition

Scientific paper

Electrical resistivity of InGaN layers grown by metal organic vapor
phase epitaxy has been studied at narrow temperature interval.
Resistivity and Hall effect measurements were carried out as a function
of temperature in the samples. We obtained that there was Mott variable
range hopping mechanism in investigated samples.

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