Physics
Scientific paper
Feb 2012
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012njph...14b5007c&link_type=abstract
New Journal of Physics, Volume 14, Issue 2, pp. 025007 (2012).
Physics
Scientific paper
Vacancy-type defects created by single-energy implantation of Czochralski-grown single-crystal silicon by 4 MeV silicon ions at doses of 1012 and 1013 cm-2 have been compared with those created by an energy chain of implants of 0.4, 0.9, 1.5, 2.2 and 4 MeV ions, each at one-fifth of the single-energy dose. Measurements were taken for as-implanted samples and after annealing to temperatures up to 600 °C. In contrast to the expectation that a more uniform depth distribution of interstitials and vacancies would lead to a more efficient recombination and consequently fewer surviving vacancies, vacancy-related damage survived in the chain-implanted samples to higher temperatures, before almost complete annealing at 600 °C. It is therefore concluded that it is the absolute initial monovacancy concentration, rather than any initial separation of vacancy- and interstitial-rich regions, that determines the probability of survival as divacancies, and that there exists a threshold divacancy concentration of 1-2 × 1018 cm-3 for clustering at 400-500 °C.
Coleman P. G.
Edwardson C. J.
Gwilliam Russell M.
Knights A. P.
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