V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates

Details V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957...94y&link_type=abstract

Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of

Physics

Optics

1

Scientific paper

CdTe and HgCdTe layers were grown by MBE on GaAs(310) and Si(310) substrates. The dependences of microrelief height and macroscopic defects densities on the growth conditions of CdTe layer are plotted. CdTe buffer layers with the average height of surface relief of 2 nm are obtained. HgCdTe layers on GaAs(310) substrates with V-shaped defects density of 200-300 cm-2 were grown. When Si(310) substrates are used, the boundaries between antiphase domains are an additional reason for formation of V-shaped defects. It is shown, that the optimization of surface preparation processes and the growth conditions allows to grow one-domain films of CdTe buffer layers on Si(310) substrates and to lower the density of V-shaped defects.

Affiliated with

Also associated with

No associations

Rating

V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1223360