Physics
Scientific paper
Apr 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..184s&link_type=abstract
Proc. SPIE Vol. 3629, p. 184-192, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.
Physics
1
Scientific paper
This paper discusses the collaborative optical and electrical characterization of the first photovoltaic (PV) III-nitride based detectors grown and fabricated by the Air Force Research Laboratory (AFRL). These 2.6 micrometer thick, n-type GaN Schottky detector structures doped with Si were grown by molecular beam epitaxy (MBE) on (0001)-oriented sapphire substrates, and incorporated palladium (Pd) as the Schottky metal contact. Working Schottky-barrier detector sizes ranged from 50 micrometer to 1600 micrometer in diameter. Flood- illuminated spectral responsivities of these Schottky detectors were as high as 0.12 A/W (for a 1600 micrometer diameter device biased at -1.5 V) at a peak wavelength of 273 nm. The typical measured frequency response of these detectors was flat from dc to the chopper limit of 700 Hz, and the 1/e response time of a 1600 micrometer diameter Schottky- barrier GaN detector was found to be as low as 50 microsecond(s) at zero bias. Noise characterization of these detectors was also performed, and noise equivalent powers (NEPs) of sample GaN Schottky-barrier detectors are reported.
Dang Tuoc
Estes Michael J.
Hoelscher Jing
Schreiber P. J.
Smith Gary
No associations
LandOfFree
UV Schottky-barrier detector development for possible Air Force applications does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with UV Schottky-barrier detector development for possible Air Force applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and UV Schottky-barrier detector development for possible Air Force applications will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-895814