Ultra-luminescent a-SiOx<Er> resonant structures

Details Ultra-luminescent a-SiOx<Er> resonant structures Ultra-luminescent a-SiOx<Er> resonant structures

2011-07-21

arxiv.org/abs/1107.4270v1

Physics

Optics

9 pages, 3 figures

Scientific paper

We have fabricated ultra-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx) layers deposited on SiO2/Si substrates. The layer thicknesses were designed to provide a resonance with low Q and large modal effective volume at 1540 nm and resonances in the wavelength range between 600 - 1200 nm. Within this range, strong light emission from a-SiOx defect-related radiative centers is observed. The Er3+ optical transition 4I11/2 - 4I15/2 (980 nm) is also observed. Two-fold improvement in photoluminescence intensity is achieved in the wavelength range between 800 - 1000 nm due to the resonator structure. The photoluminescence intensity in the wavelength range between 1400 - 1700 nm (region of Er3+ 4I13/2 - 4I15/2 transition) is increased four times. This improvement is apparently caused by optical pumping at 980 nm, close to the resonance wavelength where the emission from the 4I13/2 level couples to the low Q resonance at 1540 nm. After efficient dangling-bond engineering by temperature annealing, the sample shows photoluminescence intensity almost three times higher than a typical InGaAsP/InP multi-quantum well structure used in commercial laser structures.

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