Ultra high-Q photonic crystal nanocavity design: The effect of a low-epsilon slab material

Details Ultra high-Q photonic crystal nanocavity design: The effect of a low-epsilon slab material Ultra high-Q photonic crystal nanocavity design: The effect of a low-epsilon slab material

2008-02-22

arxiv.org/abs/0802.3342v1

Physics

Optics

8 pages, 6 figures

Scientific paper

10.1364/OE.16.004972

We analyze the influence of the dielectric constant of the slab on the quality factor (Q) in slab photonic crystal cavities with a minimized vertical losses model. The higher value of Q in high-epsilon cavity is attributed to the lower mode frequency. The Q ratio in a high-epsilon (silicon) vs. low-epsilon (diamond) slab is examined as a function of mode volume (Vm). The mode volume compensation technique is discussed. Finally, diamond cavity design is addressed. The analytical results are compared to 3D FDTD calculations. In a double heterostructure design, a Q=2.6*10^5 is obtained. The highest Q=1.3*10^6 with Vm=1.77*(lambda/n)^3 in a local width modulation design is derived.

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