Physics – Optics
Scientific paper
Sep 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957..241i&link_type=abstract
Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of
Physics
Optics
Scientific paper
P-n conductivity type conversion under ion milling in MOCVD p-CdxHg1-xTe/GaAs multi-layer hetero-structures is considered. It was revealed that CdTe (1 μm thick) passivation layer displayed the protective properties regarding ion milling action on active layer. P-n conversion at ion milling was observed in structures with 0.1-0.2 μm thick CdTe passivation layer; however, the converted depth (7 μm) was smaller than that in the similar homogeneous samples (15 μm). It was shown that the main properties of the converted p-n structures with thin CdTe layer were the same as in homogeneous samples. Ion milling resulted in forming of the typical n+- n - p+ structure with damaged n+-layer and main converted n-layer characterised by very low electron concentration. The relaxation of p-n structure electrical properties was also studied.
Bogoboyashchyy Victor
Grishnova Natalya
Izhnin Ihor
Kotkov Anatoliy
Moiseev Alexsandr
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