Trapping mechanisms of persistent photocurrent in GaN-based MSM detectors

Details Trapping mechanisms of persistent photocurrent in GaN-based MSM detectors Trapping mechanisms of persistent photocurrent in GaN-based MSM detectors

Jun 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5353...97p&link_type=abstract

Semiconductor Photodetectors. Edited by Linden, Kurt J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5353, pp. 97-1

Physics

Scientific paper

The trapping mechanisms at the origin of the persistent photocurrent effects in GaN-based devices have been studied on different time scales by characterizing a low barrier metal-semiconductor-metal GaN-based photodetector in the temperature range between room temperature and 500 K. The active material of the metal-semiconductor-metal device consists of a thin film of GaN grown by metal organic chemical vapour deposition. The Arrhenius plots obtained by the analysis of the decay times of the photocurrent as a function of the temperature on time scales from millisecond up to hours allowed us to calculate the activation energies of the mechanisms responsible for the persistent photocurrent. The activation energies derived from the decay times on the time scale of hours have been attributed to gallium vacancies (VGa), gallium antisites (GaN) and carbon impurities, whereas GaN excitonic resonances resulted to be responsible for the persistent photocurrent on the millisecond time scale. Finally, the influence of the decay times has been correlated with the photocurrent gain of the device, which resulted to be as high as 4.1×105 at RT and 0.85×105 at 450 K.

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