Transmission Electron Microscopy of an In Situ Presolar Silicon Carbide Grain

Details Transmission Electron Microscopy of an In Situ Presolar Silicon Carbide Grain Transmission Electron Microscopy of an In Situ Presolar Silicon Carbide Grain

Mar 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002lpi....33.1785s&link_type=abstract

33rd Annual Lunar and Planetary Science Conference, March 11-15, 2002, Houston, Texas, abstract no.1785

Physics

5

Scientific paper

We used a focused ion beam workstation to prepare ultra-thin sections of
a presolar SiC grain. Our TEM studies indicate that the SiC formed by
rapid vapor-phase condensation, trapping pre-existing graphite grains in
random orientations.

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