Transition probability of the SI III 189.2-nm intersystem line

Details Transition probability of the SI III 189.2-nm intersystem line Transition probability of the SI III 189.2-nm intersystem line

Jun 1983

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983phrva..27.3040k&link_type=abstract

Physical Review A - General Physics, 3rd Series (ISSN 0556-2791), vol. 27, June 1983, p. 3040-3043. Research supported by the Sm

Physics

General Physics

52

Atomic Energy Levels, Electron Transitions, Line Spectra, Metastable State, Silicon, Electron Bombardment, Electron Density (Concentration), Fluorosilicates, Space Plasmas, Transition Probabilities

Scientific paper

Measurement of the lifetime of the metastable 3s3p(3)P(0)1 level of Si(2+) (Si III), which decays by photon emission at 189.2 nm to the 3s2(1)S0 state, is reported. The data were taken from spontaneous emission from metastable Si III stored in an RF ion trap. The Si III ions were produced through electron bombardment of SiH4 and SiF4 at pressures of 1/100,000,000-1/10,000,000 Torr. A photomultiplier was employed to count the photon emissions from the transitions. A total of 11 decay curves were generated for analysis, with Poisson statistics used to set the uncertainties at within 8 pct. Significant systematic effects were controlled, and the lifetime was found to be within 3.6 microsec of 59.9 microsec. The method used is concluded valid for determining the lifetimes of metastable levels of low-Z ions with low charge, and thereby the transition probabilities.

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