Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells

Details Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells

May 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989jap....65.3694b&link_type=abstract

Journal of Applied Physics (ISSN 0021-8979), vol. 65, May 1, 1989, p. 3694-3697. Research supported by NASA.

Physics

1

Chips (Memory Devices), Error Analysis, Metal Oxide Semiconductors, Random Access Memory, Galactic Radiation, Geosynchronous Orbits, Microelectronics, Single Event Upsets

Scientific paper

A simple model for the soft error rate for dynamic metal-oxide-semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single-event-upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 percent per day if the shielding is 0.5 g/sq cm and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.

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