Time-domain simulation of the full hydrodynamic model

Details Time-domain simulation of the full hydrodynamic model Time-domain simulation of the full hydrodynamic model

2003-12-03

arxiv.org/abs/physics/0312021v1

Int. J. Numer. Model. 16 (2003) 161-174

Physics

Computational Physics

15 pages, 8 figures, prepared using jnmauth.cls

Scientific paper

10.1002/jnm.491

A simple upwind discretization of the highly coupled non-linear differential equations which define the hydrodynamic model for semiconductors is given in full detail. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of opto- and microelectronics. A silicon $n^+ - n - n^+$ - structure is simulated, using the energy-balance model and the full hydrodynamic model. Results for stationary cases are then compared, and it is pointed out where the energy-balance model, which is implemented in most of today's commercial semiconductor device simulators, fails to describe accurately the electron dynamics. Additionally, a GaAs $n^+ - n - n^+$-structure is simulated in time-domain in order to illustrate the importance of inertia effects at high frequencies in modern submicron devices.

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