Thermal laser stimulation for direct localization of defects in integrated circuits

Details Thermal laser stimulation for direct localization of defects in integrated circuits Thermal laser stimulation for direct localization of defects in integrated circuits

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002esasp.507..119b&link_type=abstract

Proceedings of the European Space Components Conference, ESCCON 2002, 24-27 September 2002, Toulouse, France. Compiled by R.A. H

Physics

Scientific paper

Thermal laser stimulation (OBIRCH, TIVA) is shown to be a valuable method for directly localizing faults in space dedicated and commercial ICs. Its usefulness in a failure analysis laboratory is illustrated through several different case studies. The thermal laser stimulation method has been able to detect shorts and spike defects from the front or backside of silicon IC presenting an abnormal leakage current. Through physical analysis the localized defects were found in the IC~@~Ys metallic elements as well as in its polysilicon, oxide and silicon layers

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