Thermal Expansion Coefficient of Cold-Pressed Silicon Carbide

Details Thermal Expansion Coefficient of Cold-Pressed Silicon Carbide Thermal Expansion Coefficient of Cold-Pressed Silicon Carbide

Jul 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004apsp.conf..593o&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 8th Conference. Held 6

Physics

Medical Physics

Scientific paper

The measurement of the thermal linear expansion coefficient of a cold sintered SiC has been carried out in the 4.2 - 293 K temperature range. The properties of silicon carbide are specially suitable to realise high quality mirrors and complete optomechanical structures for space astronomy. The thermal contraction of the material used for the realization of the mirror is, of course, of primary interest. We present here both a plot and smoothed data of SiC thermal contraction coefficient. Details of the dilatometric interferometer used to carry out the measurements are also reported together with a control test of the measuring bench on a material (brass) of known thermal contraction.

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