Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser

Details Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2551..301n&link_type=abstract

Proc. SPIE Vol. 2551, p. 301-307, Photoelectronic Detectors, Cameras, and Systems, C. Bruce Johnson; Ervin J. Fenyves; Eds.

Physics

Scientific paper

The interaction process of a high-power laser and a PIN-junction optoelectronic diode has been studied theoretically and experimentally. It has been put forward that the thermal effect of laser beams and the eroding and washing effect while the laser plasmas expand out, results in the silicon photodiode to be damaged. The thermal distribution, the expression of the maximum temperature, have been obtained for the first time when a Q-switched Nd:YAG laser irradiated upon the PIN junction optoelectronic diode.

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