Physics
Scientific paper
Aug 1989
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989esasp.294...71d&link_type=abstract
In its European Space Power, Volume 1 p 71-77 (SEE N90-17678 10-20)
Physics
Field Effect Transistors, High Temperature Tests, Metal Oxide Semiconductors, Thermodynamic Properties, Thermal Resistance, Thermal Simulation, Thermal Stability, Thermal Vacuum Tests
Scientific paper
Dynamic temperature testing on N-channel power metal oxide semiconductors-field effect transistors (MOS-FET) transistors (type IRF-250) is described. The test method was developed in order to optimize the inrush and overload capability of solid-state power distribution switches in order to be sure that the MOS-FET junction temperature is not exceeding a certain absolute temperature (115 C for space application). The idealized concept of thermal impedance and the different electrical methods for measuring the junction temperature are presented. A description of the test setup and the procedures are given, followed by examples of results obtained with different samples. Results are modeled and the conclusions summarized.
Delettrez C.
Spruyt J. N. H.
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