Thermal boundary conductance in heterostructures studied by ultrafast electron diffraction

Details Thermal boundary conductance in heterostructures studied by ultrafast electron diffraction Thermal boundary conductance in heterostructures studied by ultrafast electron diffraction

Sep 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006njph....8..190k&link_type=abstract

New Journal of Physics, Volume 8, Issue 9, pp. 190 (2006).

Physics

6

Scientific paper

Ultrafast electron diffraction (UED) at surfaces is used to study the energy dissipation in ultrathin epitaxial Bi-films on Si(001) subsequent to fs laser pulse excitation. The temperature of the Bi-film is determined from the drop in diffraction intensity due to the Debye Waller effect. A temperature rise from 80 to 200 K is followed by an exponential cooling with a time constant of 640 ps. The cooling rate of the Bi-film is determined by the reflection of phonons at the Bi/Si interface and is slower than expected from the acoustic and diffusive mismatch model.

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