The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection

Details The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection

Nov 1983

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983pseu.rept.....v&link_type=abstract

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Physics

Plasma Physics

Galileo Project, Holes (Electron Deficiencies), Jupiter (Planet), Plasma Physics, Radiation Belts, Computerized Simulation, Energy Transfer, Integrated Circuits, Kinetic Energy, Pair Production, Semiconductors (Materials), Space Charge

Scientific paper

When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmic ray transverse the active regions of semiconductor devices used in integrated circuit (IC) chips, it leaves along its track a high density electron hole plasma. The subsequent decay of this plasma by drift and diffusion leads to charge collection at the electrodes large enough in most cases to engender a false reading, hence the name single-event upset (SEU). The problem of SEU's is particularly severe within the harsh environment of Jupiter's radiation belts and constitutes therefore a matter of concern for the Galileo mission. The physics of an SEU event is analyzed in some detail. Owing to the predominance of nonlinear space charge effects and the fact that positive (holes) and negative (electrons) charges must be treated on an equal footing, analytical models for the ionized-charge collection and their corresponding currents as a function of time prove to be inadequate even in the simplest case of uniformly doped, abrupt p-n junctions in a one-dimensional geometry. The necessity for full-fledged computer simulation of the pertinent equations governing the electron-hole plasma therefore becomes imperative.

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