The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method

Details The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5564..189y&link_type=abstract

Infrared Systems and Photoelectronic Technology. Edited by Dereniak, Eustace L.; Sampson, Robert E.; Johnson, C. Bruce. Proceed

Physics

1

Scientific paper

The phase transition characteristic of the vanadium dioxide (VO2) film prepared by ion beam enhanced deposition (IBED) method was studied. The lattice distortion hypothesis was supposed to simulate resistance change of the VO2 polycrystalline film with temperature increasing and the simulation result was explained based on Landau theory. Due to the present of argon atom in interstitial site of VO2 lattice or grain boundary, the semiconductor- to-metal phase transition began at 48°C in some grains, obviously lower than the phase transition temperature of VO2 single crystal.

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