Physics
Scientific paper
Oct 1989
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107..176s&link_type=abstract
IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90
Physics
Capacitance-Voltage Characteristics, Electrical Properties, Gold Alloys, Indium Antimonides, Metal Oxide Semiconductors, Silicon Dioxide, Auger Spectroscopy, Chromium Alloys, Electrical Measurement, Vapor Deposition
Scientific paper
The AuCr/SiO2/InSb MOS capacitor was fabricated using photoenhanced CVD. The electrical and structural properties were analyzed by capacitance-voltage and AES, respectively. The high-frequency (1 MHz) capacitance-voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flat-band voltage shift and the change of hysteresis of capacitance-voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.
Lee Si-Chen
Sun Tai-Ping
Yang Sheng-Jenn
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