The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltelluride

Details The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltelluride The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltelluride

Oct 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991aipc..235.1630k&link_type=abstract

Physics and chemistry of mercury cadmium telluride and novel IR detector materials. AIP Conference Proceedings, Volume 235, pp.

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Chemical Vapor Deposition, Structure And Morphology, Thickness, Crystalline Orientation And Texture, Galvanomagnetic And Other Magnetotransport Effects

Scientific paper

HgCdTe was grown by the metalorganic chemical vapor deposition alloy process on (111)B CdTe/GaAs and (111)B CdTe substrates at 300 °C using diisopropyltelluride, dimethlycadmium, and elemental mercury. Excellent surface morphology and compositional uniformity were obtained at this temperature. Hall effect measurements indicate that n-type (111) HgCdTe with carrier concentration below 1015 cm-3 and good mobilities at 77 K can be obtained on GaAs substrates.

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