The influence of the dechanneling process on the photon emission by an ultra-relativistc positron channeling in a periodically bent crystal

Details The influence of the dechanneling process on the photon emission by an ultra-relativistc positron channeling in a periodically bent crystal The influence of the dechanneling process on the photon emission by an ultra-relativistc positron channeling in a periodically bent crystal

2001-09-18

arxiv.org/abs/physics/0109042v1

J.Phys.G27:95-125,2001

Physics

Accelerator Physics

published in J. Phys. G: Nucl. Part. Phys. 27 (2001) 95-125, http://www.iop.org

Scientific paper

10.1088/0954-3899/27/1/307

We investigate, both analytically and numerically, the influence of the dechanneling process on the parameters of undulator radiation generated by ultra-relativistic positron channelling along a crystal plane, which is periodically bent. The bending might be due either to the propagation of a transverse acoustic wave through the crystal, or due to the static strain as it occurs in superlattices. In either case the periodically bent crystal serves as an undulator which allows to generate X-ray and gamma-radiation. We propose the scheme for accurate quantitative treatment of the radiation in presence of the dechanneling. The scheme includes (i) the analytic expression for spectral-angular distribution which contains, as a parameter, the dechanneling length, (ii) the simulation procedure of the dechanneling process of a positron in periodically bent crystals. Using these we calculate the dechanneling lengths of 5 GeV positrons channeling in Si, Ge and W crystals, and the spectral-angular and spectral distributions of the undulator over broad ranges of the photons. The calculations are performed for various parameters of the channel bending.

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