The growth rate of Cd(x)Hg(1-x)Te grown by metalorganic chemical vapor deposition

Details The growth rate of Cd(x)Hg(1-x)Te grown by metalorganic chemical vapor deposition The growth rate of Cd(x)Hg(1-x)Te grown by metalorganic chemical vapor deposition

Feb 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992jcrgr.117...44t&link_type=abstract

(II-VI Compounds 1991; Proceedings of the 5th International Conference, Tamano, Japan, Sept. 8-13, 1991. A92-37326 15-76) Journa

Computer Science

1

Crystal Growth, Mercury Cadmium Tellurides, Metalorganic Chemical Vapor Deposition, Vapor Phase Epitaxy, Chemical Composition, Flow Velocity, Infrared Detectors, Morphology, Reaction Kinetics

Scientific paper

Cd(x)Hg(1-x)Te epitaxial layers have been grown by metalorganic chemical vapor deposition on CdTe substrates oriented 0-4 deg off (100) toward the 0 0 -1 line type, using dimethylcadmium (DMCd), diisopropyltelluride (DIPTe), and elemental mercury (Hg). Typically the Cd(x)Hg(1-x)Te layers exhibited hillock densities of (1.5-3.0) x 10 exp 2/sq cm, and FWHM in XRD of 130-180 arcsec. The growth rate and the compositional ratio x, and their dependences on the flow rates of DIPTe and DMCd have been examined. By considering the growth mechanism in the light of these results, it is concluded that the growth involves the formation of an adduct.

Affiliated with

Also associated with

No associations

Rating

The growth rate of Cd(x)Hg(1-x)Te grown by metalorganic chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The growth rate of Cd(x)Hg(1-x)Te grown by metalorganic chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The growth rate of Cd(x)Hg(1-x)Te grown by metalorganic chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1048981