The fully integrated Schottky array - A new generation of metal silicide infrared detectors

Details The fully integrated Schottky array - A new generation of metal silicide infrared detectors The fully integrated Schottky array - A new generation of metal silicide infrared detectors

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308...58t&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

Physics

2

Infrared Detectors, Integrated Circuits, Phased Arrays, Schottky Diodes, Barrier Layers, Charge Coupled Devices, Metal Oxide Semiconductors, Systems Integration

Scientific paper

A proposal for a metal-silicide full Schottky IR detector array is presented. IR detection and charge transfer are conducted with metal silicide gates which lie directly on silicon, and a detector array designed as a frame transfer device. A half-Schottky CCD was developed to probe the concept, with one phase gate built as a Schottky silicide gate. A more advanced version with higher fill factors was also tested. IR sensitive Schottky CCD gates are connected to nonsensitive Schottky CCD gates, allowing frame storage; line by line readouts are made through a Schottky gate readout CCD. A new method for submicron patterning between the metal Schottky gates is presented to develop the fully integrated version. IR detection is facilitated by the use of low Schottky barrier height silicides, while non-IR-sensitive storage CCDs and readout CCDs use metal silicides with high Schottky barrier heights. The device is demonstrated to be highly radiation-resistant, with built-in antiblooming capacity, and the charge handling capacity is higher than that of conventional devices because no gate oxides are utilized.

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