The epitaxial Si x ray bolometer an alternative to ion implanted devices

Details The epitaxial Si x ray bolometer an alternative to ion implanted devices The epitaxial Si x ray bolometer an alternative to ion implanted devices

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.356..423z&link_type=abstract

In ESA, Proceedings of an ESA Symposium on Photon Detectors for Space Instrumentation p 423-425 (SEE N94-15025 03-19)

Computer Science

Performance

Bolometers, Doped Crystals, Epitaxy, Silicon, X Ray Detectors, Design Analysis, Ion Implantation, Single Crystals, Superconducting Devices, Tunnel Junctions

Scientific paper

The ion implanted Si bolometer has unequaled performance as a high resolution X-ray detector. The superconducting tunnel junction detector has to date, been unable to provide such performance. A new form of Si bolometer using single crystal epitaxial growth to replace ion implantation for better power handling, good uniformity and low excess noise, is under development. The use of epitaxial growth allows the production of single crystal layers with a thickness of up to 40 micrometers with simultaneous doping from a secondary dopant gas stream. In addition, the layer can be capped with an undoped layer to minimize excess noise and further improve performance.

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