The electrical characterisation of semiconductors

Details The electrical characterisation of semiconductors The electrical characterisation of semiconductors

Feb 1978

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1978rpph...41..157b&link_type=abstract

Reports on Progress in Physics, vol. 41, Feb. 1978, p. 157-257.

Physics

32

Crystal Defects, Electrical Properties, Electrical Resistivity, Semiconductors (Materials), Silicon, Acceptor Materials, Additives, Capacitance, Chemiluminescence, Donor Materials, Impurities, Magnetoresistivity

Scientific paper

The electrical effects of impurities and defects in semiconductors, especially silicon and the III-V compounds, are discussed. Methods of studying resistivity, free carrier density, donor and acceptor impurity densities, donor and trap energy levels, minority carrier lifetimes and diffusion length are reviewed. The electrical characterization techniques include contactless optical assessment, RF power absorption, four-point probe, diode transients, magnetoresistance, Van der Pauw transport measurements, stripping plus transport measurement, and bevel plus spreading resistance. The recent use of capacitance techniques to characterize materials also receives attention. In addition, optical methods involving the use of luminescence for chemical identification of electrically active impurities are described.

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