The effects of precipitates on CdZnTe device performance

Details The effects of precipitates on CdZnTe device performance The effects of precipitates on CdZnTe device performance

Aug 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5922....9c&link_type=abstract

Hard X-Ray and Gamma-Ray Detector Physics VII. Edited by James, Ralph B.; Franks, Larry A.; Burger, Arnold. Proceedings of the

Physics

Scientific paper

A high-intensity X-ray beam collimated down to a 10-micrometer spot size, available at Brookhaven's National Synchrotron Light Source (NSLS), was employed to perform X-ray mapping to measure the correlation between microscopic defects (precipitates) and variations in the collected charges in long-drift CdZnTe (CZT) detectors. First, we use X-ray diffraction topography (XDT) measurements at the high-energy beamline and IR microscopy to identify the defects distribution and strains in the bulk of CZT crystals. Then, we perform X-ray raster scans of the CZT detectors to measure their responses with 10-micrometer spatial resolution. The brightness of the source allows for good statistics in very short times. Precipitates that were singled out with X-ray scans are locally investigated by applying pulse-shape analysis. The presentation discusses how precipitates affect the device performance.

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