Physics
Scientific paper
Nov 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999njph....1...20b&link_type=abstract
New Journal of Physics, Volume 1, Issue 1, pp. 20 (1999).
Physics
6
Scientific paper
Using the technique of photoelectron diffraction in the scanned energy mode we show that the Si dimer separation on the Si{100} surface following the adsorption of ethene (ethylene) is 2.36(+/-0.21) Å. This value is only very slightly larger than on the clean surface and shows that the dimer remains intact, thus providing a clear quantitative experimental resolution of a long controversy in the literature. The C-C and C-Si separations are 1.62+/-0.08 Å and 1.90+/-0.01 Å, respectively, the former indicating a bond order of less than one.
Baumgärtel P.
Bradshaw Margaret A.
Carbone Marco
Gießel T.
Hoeft J. T.
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