The Calculation of Electronic Parameters of an Al/Methyl Red/p-Si Schottky Diode

Details The Calculation of Electronic Parameters of an Al/Methyl Red/p-Si Schottky Diode The Calculation of Electronic Parameters of an Al/Methyl Red/p-Si Schottky Diode

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..261k&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 261-262 (2007).

Physics

Surface Double Layers, Schottky Barriers, And Work Functions, Rectification, Metal-Nonmetal Contacts

Scientific paper

The Al/methyl red/p-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrate, and then evaporating the solvent. The methyl red/p-Si contact shows rectifying behaviour and the reverse curve exhibits weak bias voltage dependence. Electronic parameters of Al/methyl red/p-Si Schottky barrier diode were calculated by using current-voltage (I-V) curve and interface state density distribution properties were obtained by using capacitance method. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valance band.

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