The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing

Details The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing

Dec 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004njph....6..192k&link_type=abstract

New Journal of Physics, Volume 6, Issue 1, pp. 192 (2004).

Physics

3

Scientific paper

Our experiments show that photoluminescence spectra from dilute nitride Ga1-xInxNyAs1-y/GaAs (y < 2%) quantum wells (QW) are independent of growth temperature of the QWs in the range from 430 to 470°C. Spectral blue shift upon annealing is large for the low-temperature QW (430°C), and emission intensity is more enhanced than that of the high-temperature QW (470°C). Raman scattering reveals that the 430°C QW contains more In N bonds than does the 470°C QW. It seems, therefore, that the blue shift, which is proportional to a number of In N bonds, originates from the presence of point-like defects of the alloy. Lower emission intensity from the annealed 470°C sample may be attributed to more pronounced alloy fluctuations and interface roughening, seen in cross-sectional transmission electron micrographs.

Affiliated with

Also associated with

No associations

Rating

The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1163429