Test beam results of ATLAS Pixel Sensors

Details Test beam results of ATLAS Pixel Sensors Test beam results of ATLAS Pixel Sensors

2002-10-18

arxiv.org/abs/hep-ex/0210045v1

Physics

High Energy Physics

High Energy Physics - Experiment

8 pages, 6 figures, Pixel2002 conference

Scientific paper

Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental behaviour of the detectors after irradiation to 1.1 10**15 n_eq/cm**2 and 600 kGy is discussed. At the sensor bias voltage of 600 V the depleted depth is measured to be 229 um, the mean collected charge is 20000 electrons, the detection efficiency is 98.2% and the spatial resolution is 9.6 um

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