Terahertz Response of Field-Effect Transistors in Saturation Regime

Details Terahertz Response of Field-Effect Transistors in Saturation Regime Terahertz Response of Field-Effect Transistors in Saturation Regime

2010-04-21

arxiv.org/abs/1004.3740v1

Physics

Instrumentation and Detectors

11 pages, 3 figures

Scientific paper

We report on the broadband THz response of InGaAs/GaAs HEMTs operating at
1.63 THz and room temperature deep in the saturation regime. We demonstrate
that responses show linear increase with drain-to-source voltage (or drain bias
current) and reach very high values up to 170V/W. We also develop a
phenomenological theory valid both in the ohmic and in the saturation regimes.

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