Terahertz Detection by High Electron Mobility Transistor: Effect of Drain Current

Details Terahertz Detection by High Electron Mobility Transistor: Effect of Drain Current Terahertz Detection by High Electron Mobility Transistor: Effect of Drain Current

Dec 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001stt..conf..103l&link_type=article

Proceedings of the Twelfth International Symposium on Space Terahertz Technology, held February 14-16, 2001, on Shelter Island,

Physics

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