Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures

Details Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957..360r&link_type=abstract

Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of

Physics

Optics

Scientific paper

The performance of multi-layer hetrojunction (MLHJ) HgCdTe photodiodes at high temperatures is presented. The effect of inherent and excess current mechanisms on quantum efficiency and R0A product is analyzed. The diodes with good R0A operability and high quantum efficiency at 200-300 K have been demonstrated at cutoff wavelengths up to 5 μm. The temperature dependence of the differential resistance is discussed. The experimental results show that proper surface passivation and low series/contact resistance are major issues relating to fabrication of HgCdTe detectors with high performance.

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