Physics
Scientific paper
Apr 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..443e&link_type=abstract
SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 443-444 (2007).
Physics
Surface Double Layers, Schottky Barriers, And Work Functions, Metal-Nonmetal Contacts
Scientific paper
n-type (100) oriented Si0.76Ge0.24 samples used in this work were grown by silicon molecular beam epitaxy (Si-MBE). The formation of Schottky junction is made by deposition Pt on n-Si0.76Ge0.24. The electrical properties of Pt/n-Si0.76Ge0.24/n-Si diodes were studied by current-voltage (I-V) measurements. These measurements have done under different temperatures and Schottky barrier heights have determined. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity at low temperatures. It demonstrates that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. The temperature dependence of the I-V characteristics of the Pt/n-Si0.76Ge0.24/n-Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier height.
Bektore Yuksel
Erturk Kadir
Haciismailoglu Muhammed Cuneyt
Taysioglu Asli Ayten
No associations
LandOfFree
Temperature Dependent Barrier Characteristics of Pt/n-Si0.76Ge0.24/n-Si Schottky Diodes Based on I-V-T Measurements does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Temperature Dependent Barrier Characteristics of Pt/n-Si0.76Ge0.24/n-Si Schottky Diodes Based on I-V-T Measurements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature Dependent Barrier Characteristics of Pt/n-Si0.76Ge0.24/n-Si Schottky Diodes Based on I-V-T Measurements will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1681106