Temperature dependencies of the energy and time resolution of silicon drift detectors

Details Temperature dependencies of the energy and time resolution of silicon drift detectors Temperature dependencies of the energy and time resolution of silicon drift detectors

2011-03-11

arxiv.org/abs/1103.2254v1

Physics

Instrumentation and Detectors

Scientific paper

The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized to about 150 eV at 6 keV between 130 K and 200 K, while the time resolution shows a temperature dependence of T^3 in this temperature range. To keep a variation of the X-ray peak positions within 1 eV, it is necessary to operate the preamplifier within a stability of 1 K around 280 K. A detailed investigation of this temperature influences on SDDs and preamplifiers is presented.

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