Techniques for high frequency power conversion

Details Techniques for high frequency power conversion Techniques for high frequency power conversion

Aug 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989esasp.294..351w&link_type=abstract

In ESA, European Space Power, Volume 1 p 351-356 (SEE N90-17678 10-20)

Physics

Electric Switches, Field Effect Transistors, High Frequencies, Metal Oxide Semiconductors, Power Converters, Switching Circuits, Magnetic Materials, Optimization, Pulse Duration Modulation, Step Recovery Diodes, Thermodynamic Efficiency

Scientific paper

The use of high speed driving of power MOSFETs (metal oxide semiconductors field effect transistors) for high power density power conversion is discussed. Switching frequencies of 500 kHz and above have called for new techniques in all areas of power converter design. MOSFET and diode switching losses, high frequency magnetic materials and core losses, skin and proximity effects are discussed as means of optimizing power converter design. Parasitics, thermal design, cooling, and the effects of noise are discussed.

Affiliated with

Also associated with

No associations

Rating

Techniques for high frequency power conversion does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Techniques for high frequency power conversion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for high frequency power conversion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1515965