Synthetic IR signature control using emissivity enhancement techniques

Details Synthetic IR signature control using emissivity enhancement techniques Synthetic IR signature control using emissivity enhancement techniques

Aug 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5408..118m&link_type=abstract

Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX. Edited by Murrer, Robert Lee, Jr. Proceedings of t

Physics

7

Scientific paper

In this report, we show both theoretically and experimentally how the IR signature of a semiconductor scene (with band gap energy Eg) can be monitored through contactless emissivity control even if this scene thermometric temperature is kept constant. More specifically, we show how a scene emissivity in the spectral band beyond the fundamental absorption range (ω2 < Eg / h, 3 to 5 μm and 8 to 12 μm transparency windows) can be dynamically (frame frequency > 20 kHz) monitored by a shorter wavelength photo excitation of non-equilibrium charge carriers (ω1 > Eg/h, "visible range"). Experimental tests performed on Si and Ge scenes (300 < T < 600 K), demonstrate optically generated cold and hot images and, what is more important, negligible temperature contrast between an object and a background (Stealth effect in IR).

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