Surface-electrode ion trap with integrated light source

Details Surface-electrode ion trap with integrated light source Surface-electrode ion trap with integrated light source

2011-03-27

arxiv.org/abs/1103.5256v1

Appl. Phys. Lett. 98, 214103 (2011)

Physics

Quantum Physics

4 pages, 4 figures

Scientific paper

10.1063/1.3593496

An atomic ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transition of $^{88}$Sr$^+$. Through \emph{in situ} translation of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-ion displacement, in units of the mode waist at the ion, is optimized to within $0.13\pm0.10$ of the mode center despite an initial offset of $3.30\pm0.10$. Fiber-induced charging at $125 \mu$W is observed to be ${\sim}10$ V/m at an ion height of $670 \mu$m, with charging and discharging time constants of $1.6\pm0.3$ s and $4.7\pm0.6$ s respectively. This work is of importance to large-scale, ion-based quantum information processing, where optics integration in surface-electrode designs may be a crucial enabling technology.

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