Supersensitive avalanche silicon drift photodetector

Details Supersensitive avalanche silicon drift photodetector Supersensitive avalanche silicon drift photodetector

1999-09-10

arxiv.org/abs/hep-ex/9909017v1

Physics

High Energy Physics

High Energy Physics - Experiment

3 pages

Scientific paper

Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a drain contact to provide a drift of multiplicated charge carriers along the semiconductor surface. A high gain(more than 10^4) of photocurrent was achived due to the local negative feedback effect realizied on the Si-SiO_2 boundary. Special attention is paid to the possibilities of development of a supersensitive avalanche CCD (charge coupled device) for detection of individual photons in visible and ultraviolet spectral regions. Experimental results obtained with a two-element CCD prototype are discussed.

Affiliated with

Also associated with

No associations

Rating

Supersensitive avalanche silicon drift photodetector does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Supersensitive avalanche silicon drift photodetector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Supersensitive avalanche silicon drift photodetector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-546522