Study of tips in an ultrafast scanning tunneling microscope

Details Study of tips in an ultrafast scanning tunneling microscope Study of tips in an ultrafast scanning tunneling microscope

Jan 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5633..610l&link_type=abstract

Advanced Materials and Devices for Sensing and Imaging II. Edited by Wang, Anbo; Zhang, Yimo; Ishii, Yukihiro. Proceedings of

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Ultrafast measurement system for transient electrical signals using a scanning tunneling microscope has been developed. The key of the system is a probe integrated with a low-temperature grown GaAs photoconductive switch that is used as a sampler of transient signals generated by ultrashort laser pulses with another photoconductive switch. The tunneling tip is attached to a coplanar strip transmission line with an integrated photoconductive switch. The probe fabrication process and tip characteristics have been reported here. A topographic STM image scanned with such a probe on a gold sample on Si substrate is given. A transient signal with 1.2 ps pulse width in tunneling mode and 2.0 ps in contact mode were observed with the probe.

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