Study of the recombination mechanisms and carrier lifetimes in Hg0.8Cd0.2Te alloy

Details Study of the recombination mechanisms and carrier lifetimes in Hg0.8Cd0.2Te alloy Study of the recombination mechanisms and carrier lifetimes in Hg0.8Cd0.2Te alloy

Sep 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685..285y&link_type=abstract

Proc. SPIE Vol. 1685, p. 285-293, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

1

Scientific paper

Using the basic theories of carrier recombination in Hg(subscript 0.8)Cd(subscript 0.2)Te materials, the recombination problems in MCT of x equals 0.2 are studied and the variation in carrier lifetime with carrier concentration, doping density, the density of S-R centers, the energy level of S-R centers, and temperature in n and p-type Hg(subscript 0.8)Cd(subscript 0.2)Te are obtained. In addition, the recombination mechanisms in the materials mentioned are analyzed.

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