Study of the degradation of short-circuit current and the open-circuit tension of spatial solar cells as a function of the fluency of 1MeV electrons

Details Study of the degradation of short-circuit current and the open-circuit tension of spatial solar cells as a function of the fluency of 1MeV electrons Study of the degradation of short-circuit current and the open-circuit tension of spatial solar cells as a function of the fluency of 1MeV electrons

Dec 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984stin...8527814v&link_type=abstract

Presented at the Simp. Brasileiro de Microelectronica

Physics

Electromagnetic Radiation, Ionizing Radiation, Photovoltaic Effect, Short Circuits, Solar Cells, Diodes, Electric Current, Electric Fields, Electrical Resistance, Electromotive Forces, Microelectronics

Scientific paper

Results of a study of the degradation of short circuit current and the tension of open circuitry of spatial solar cells as a function of the fluency of 1 MeV electrons are presented. The theory of the degradation of solar cells by ionizing radiation is discussed as it relates to the diminution of the length of diffusion and variations in short circuit current and open circuit tension by irradiation. Parameters were determined which could be adjusted as curves of ISC and VOC, as a function of the fluency of 1 MeV electrons, and spatial solar cells (type n/p) with and without a retrosuperficial electrical field and retroreflector contact. A double exponential model and iterative methods were used which permitted the determination of the values of series resistance, saturation current of the mechanism of diffusion, and saturation current of the recombination process. An empiric equation is proposed for the degradation of VOC by solar cell irradiation with retroreflector contact.

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