Study of Lithium Diffusion Into Silicon-Germanium Crystals

Details Study of Lithium Diffusion Into Silicon-Germanium Crystals Study of Lithium Diffusion Into Silicon-Germanium Crystals

Jun 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008apsp.conf..591r&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 10th Conference. Held

Physics

Medical Physics

Scientific paper

In this study lithium atoms were diffused into single crystal, Czochralski grown silicon-germanium. It is shown that the diffusion coefficient has a considerable dependence on germanium concentration. In addition the surface concentration of lithium in silicon germanium is significantly higher than the values reported for float zone grown pure silicon crystals. The study compares direct and indirect characterization methods used to determine the lithium profile in silicon germanium. The Si1-xGex semiconductors used in this study contain 2.6% and 5.4% (atomic concentration) of germanium and have measured resistivities of 100-200 Ω × cm.

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