Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy

Details Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..228c&link_type=abstract

Proc. SPIE Vol. 2225, p. 228-236, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

Deep levels in p(superscript +)n Hg(subscript 0.73)Cd(subscript 0.27)Te/Hg(subscript 0.68)Cd(subscript 0.32)Te planar heterostructure diodes, grown by molecular beam epitaxy on CdZnTe wafers, were studied using deep level transient spectroscopy (DLTS). The DLTS spectra showed the presence of at least two hole traps with activation energies close to midgap. The activation energy obtained from the Arrhenius plots showed a strong dependence on the aplied bias, making it difficult to obtain a precise value.

Affiliated with

Also associated with

No associations

Rating

Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-824828