Structure of elastically strain-sharing silicon(110) nanomembranes

Details Structure of elastically strain-sharing silicon(110) nanomembranes Structure of elastically strain-sharing silicon(110) nanomembranes

Aug 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9..270o&link_type=abstract

New Journal of Physics, Volume 9, Issue 8, pp. 270 (2007).

Physics

2

Scientific paper

Nanomembranes composed of single-crystal, tensilely strained Si(110) and compressively strained SiGe(110) layers have been fabricated from silicon-on-insulator (SOI) substrates. Elastic strain sharing is demonstrated for a trilayer structure consisting of a 12 nm Si/80 nm Si0.91Ge0.09 film epitaxially grown on a 12 nm thick (110) oriented Si template layer that is subsequently released from its handle substrate. X-ray diffraction on the as-grown and released structures confirms a virtually dislocation-free membrane with a tensile strain of 0.23±0.02% in the Si(110) layers after release. Lower growth temperatures in molecular beam epitaxy allow for smoother growth fronts than are possible using chemical vapour deposition.

Affiliated with

Also associated with

No associations

Rating

Structure of elastically strain-sharing silicon(110) nanomembranes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Structure of elastically strain-sharing silicon(110) nanomembranes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of elastically strain-sharing silicon(110) nanomembranes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1796370